KHB4D0N80P1 Datasheet, PDF (1/7 Pages) KEC(Korea Electronics) – N CHANNEL MOS FIELD EFFECT TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for electronic ballast and
switch mode power supplies.
FEATURES
V_DSS=800V, I_D=4A
Drain-Source ON Resistance
: R_DS(ON)=3.6 @V_GS = 10V
Qg(typ.)=25nC
KHB4D0N80P1/F1/F2
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
KHB4D0N80P1
A
E
I
K
M
D
NN
F
G
B
Q
L
J
O
C
P
H
123
1. GATE
2. DRAIN
3. SOURCE
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
MILLIMETERS
9.9 +_ 0.2
15.95 MAX
1.3+0.1/-0.05
0.8 +_ 0.1
3.6 +_ 0.2
2.8 +_ 0.1
3.7
0.5+0.1/-0.05
1.5
13.08 +_ 0.3
1.46
1.4 +_ 0.1
1.27 +_ 0.1
2.54 +_ 0.2
4.5 +_ 0.2
2.4 +_ 0.2
9.2 +_ 0.2
MAXIMUM RATING (Tc=25 )
RATING
CHARACTERISTIC
SYMBOL
KHB4D0N80F1 ^UNIT
KHB4D0N80P1
KHB4D0N80F2
Drain-Source Voltage
Gate-Source Voltage
Drain Current
@T_C=25
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above25
V_DSS
V_GSS
I_D
I_DP
E_AS
E_AR
dv/dt
P_D
800
30
4.0
4.0*
16
16*
460
13
4.0
130
43
1.04
0.34
Maximum Junction Temperature
T_j
Storage Temperature Range
T_stg
Thermal Characteristics
150
-55 150
Thermal Resistance, Junction-to-Case R_thJC
0.96
2.9
Thermal Resistance, Junction-to-
Ambient
R_thJA
62.5
62.5
* : Drain current limited by maximum junction temperature.
V
V
A
mJ
mJ
V/ns
W
W/
/W
/W
PIN CONNECTION
D
G
S
TO-220AB
KHB4D0N80F1
A
C
E
L
M
D
NN
123
R
H
1. GATE
2. DRAIN
3. SOURCE
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
Q
R
MILLIMETERS
10.16 +_ 0.2
15.87 +_ 0.2
2.54 +_ 0.2
0.8 +_ 0.1
3.18 +_ 0.1
3.3 +_ 0.1
12.57 +_ 0.2
0.5 +_ 0.1
13.0 MAX
3.23 +_ 0.1
1.47 MAX
1.47 MAX
2.54 +_ 0.2
6.68 +_ 0.2
4.7 +_ 0.2
2.76 +_ 0.2
TO-220IS (1)
KHB4D0N80F2
A
C
S
E
L
L
M
D
D
NN
123
R
H
1. GATE
2. DRAIN
3. SOURCE
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
Q
R
S
MILLIMETERS
10.0 +_ 0.3
15.0 +_ 0.3
2.70 +_ 0.3
0.76+0.09/-0.05
Φ3.2 +_ 0.2
3.0 +_ 0.3
12.0 +_ 0.3
0.5+0.1/-0.05
13.6 +_ 0.5
3.7+_ 0.2
1.2+0.25/-0.1
1.5+0.25/-0.1
2.54 +_0.1
6.8 +_0.1
4.5+_ 0.2
2.6+_ 0.2
0.5 Typ
TO-220IS
2007. 9. 10
Revision No : 0
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