KGT25N120KDA Datasheet, PDF (6/8 Pages) KEC(Korea Electronics) – SEMICONDUCTOR TECHNICAL DATA

KGT25N120KDA
Fig 13. Gate Charge Characteristics
16
Common Emitter
14 R_L = 24Ω
T_C = 25 C
12
Vcc = 200V
10
600V
400V
8
6
4
2
0
0 20 40 60 80 100 120 140 160 180 200
Gate Charge Q_g (nC)
Fig 15. Turn-Off SOA
100
Fig 14. SOA Characteristics
100.00
10.00
50µs
200µs
1.00
0.10
0.01
Single nonrepetitive pulse
Tc= 25 C
Curves must be derated
linearly with increase
in temperature
0.1
1
10
1ms
10ms
DC
Operation
100
1000
Collector-Emitter Voltage V_CE (V)
10
Turn-Off Safe Operating Area
V_GE = 15V, T_C =125 C
1
1
10
100
1000
Collector-Emitter Voltage V_CE (V)
10.000
Fig 16. Transient Thermal Impedance of IGBT
1.000
0.5
0.100
0.2
0.1
0.05
0.010
0.02
0.01
0.001
1E-5
Single Pluse
1E-4
1E-3
1E-2
P_DM
t₁
t₂
1. Duty factor D=t1/t2
2. Peak Tj = Pdm Zthjc + T_C
1E-1
1E+00
1E+01
Rectangular Pulse Duration (sec)
2011. 5. 25
Revision No : 0
6/8