KGT25N120KDA Datasheet, PDF (1/8 Pages) KEC(Korea Electronics) – SEMICONDUCTOR TECHNICAL DATA

SEMICONDUCTOR
TECHNICAL DATA
General Description
KEC NPT Trench IGBTs offer low switching losses, high energy
efficiency and short circuit ruggedness.
It is designed for applications such as motor control, uninterrupted power
supplies(UPS), general inverters.
FEATURES
hHigh speed switching
hHigh system efficiency
hShort Circuit Withstand Times ℜ10us
hExtremely enhanced avalanche capability
KGT25N120KDA
A
B
O
S
K
D
E
F
P
P
1
2
3
DIM MILLIMETERS
A
15.90 +_ 0.30
B
5.00 +_ 0.20
C
20.85 +_ 0.30
D
3.00 +_ 0.20
E
2.00 +_ 0.20
F
1.20 +_ 0.20
MG
H
I
Max. 4.50
20.10 +_ 0.70
0.60 +_ 0.02
I
J
14.70 +_ 0.20
K
2.00 +_ 0.10
M
2.40 +_ 0.20
O
3.60 +_ 0.30
P
5.45 +_ 0.30
Q
3.60 +_ 0.20
R
7.19 +_ 0.10
S
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL RATING UNIT
Collector-Emitter Voltage
Gate-Emitter Voltage
V_CES
1200
V
V_GES
‚20
V
Collector Current
@Tc=25
I_C
@Tc=100
50
A
25
A
Pulsed Collector Current
I_CM*
90
A
Diode Continuous Forward Current @Tc=100
I_F
25
A
Diode Maximum Forward Current
I_FM
150
A
Maximum Power Dissipation
@Tc=25
P_D
@Tc=100
310
W
125
W
Maximum Junction Temperature
T_j
150

Storage Temperature Range
T_stg -55 to + 150 _
*Repetitive rating : Pulse width limited by max. junction temperature
THERMAL CHARACTERISTIC
CHARACTERISTIC
Thermal Resistance, Junction to Case (IGBT)
Thermal Resistance, Junction to Case (DIODE)
Thermal Resistance, Junction to Ambient
SYMBOL
R_{t h JC}
R_{t h JC}
R_{t h JA}
MAX.
0.4
2.8
40
UNIT
/W
/W
/W
TO-247
C
G
E
E
C
G
2011. 5. 25
Revision No : 0
1/8