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KMB8D2N60QA Datasheet, PDF (4/4 Pages) KEC(Korea Electronics) – N-Ch Trench MOSFET
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KMB8D2N60QA
Fig7. VGS - Qg
10
VDS=30V
ID=8.2A
8
6
4
2
0
0
10
20
30
40
50
Gate Charge Qg (nC)
Fig9. Safe Operation Area
102
101
100
Operation in this
area is limited by RDS(ON)
10-1
VGS=10V
SINGLE PULSE
10-2 TA = 25 C
10-2
10-1
100
100µs
1ms
10ms
100ms
1s
10s
DC
101
102
Drain - Source Voltage VDS (V)
3500
3000
2500
2000
1500
1000
500
0
0
Fig8. C - VDS
f=1MHz
Ciss
Coss
Crss
5
10 15 20 25 30
Drain - Source Voltage VDS (V)
100
0.5
0.2
0.1
10-1
0.05
0.02
10-2 0.01
SINGLE
10-3
10-4
10-3
Fig10. Transient Thermal Response Curve
10-2
10-1
100
Square Wave Pulse Duration (sec)
PDM
t1
t2
- Duty cycle D = t1/t2
10
102
103
2007. 9. 3
Revision No : 1
4/4