KMB8D2N60QA Datasheet, PDF (1/4 Pages) KEC(Korea Electronics) – N-Ch Trench MOSFET

SEMICONDUCTOR
TECHNICAL DATA
GENERAL DESCRIPTION
This Trench MOSFET has better characteristics, such as fast switching time, low
on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly
suitable for portable for portable equipment and SMPS.
FEATURES
V_DSS=60V, I_D=8.2A.
Drain-Source ON Resistance.
R_DS(ON)=22m (Max.) @ V_GS=10V
R_DS(ON)=27m (Max.) @ V_GS=4.5V
Super High Dense Cell Design
MOSFET Maximum Ratings (Ta=25 Unless otherwise noted)
CHARACTERISTIC
SYMBOL PATING UNIT
Drain Source Voltage
Gate Source Voltage
V_DSS
V_GSS
60
V
25
V
Drain Current
DC@T_A=25
DC@T_A=70
Pulsed
8.2
A
I_D*
6.6
A
I_DP
40
A
Drain Source Diode Forward Current
I_S
3.0
A
Drain Power Dissipation
T_A=25
T_A=70
Maximum Junction Temperature
Storage Temperature Range
3.0
W
P_D*
2.0
W
T_j
150
T_stg
-55~150
Thermal Resistance, Junction to Ambient
R_thJA*
41
/W
Note : *Surface Mounted on 1 1 FR4 Board
PIN CONNECTION (TOP VIEW)
S1
8_D
1
8
S2
7D
2
7
3
6
S₃
6_D
G₄
4
5D
5
KMB8D2N60QA
N-Ch Trench MOSFET
H
T
DP
G
L
A
8
5
DIM
A
B1
B2
D
MILLIMETERS
4.85 +_ 0.2
3.94 +_ 0.2
6.02+_ 0.3
0.4 +_ 0.1
B1 B2
G 0.15+0.1/-0.05
H
1.63 +_ 0.2
1
4
L
0.65 +_ 0.2
P
1.27
T 0.20+0.1/-0.05
FLP-8
KMB8D2N
60QA
2007. 9. 3
Revision No : 1
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