KHB7D5N60P1 Datasheet, PDF (4/7 Pages) KEC(Korea Electronics) – N CHANNEL MOS FIELD EFFECT TRANSISTOR

KHB7D5N60P1/F1
2400
2000
1600
1200
800
400
0 _10-1
C - V_DS
Frequency = 1MHz
Ciss
Coss
Crss
10⁰
10¹
Drain - Source Voltage V_DS (V)
Safe Operation Area
10²
Operation in this
area is limited by R_DS(ON)
10µs
10¹
100µs
10⁰
10^-1
Tc= 25 C
T_j = 150 C
10^{2 Single nonrepetitive pulse}
10⁰
10¹
10²
1ms
10ms
100ms
DC
10³
Drain - Source Voltage V_DS (V)
(KHB7D5N60P1)
I_D - T_j
8
6
4
2
0
25
50
75
100
125
150
Junction Temperature Tj ( _C)
2005. 12. 27
Revision No : 0
12
I_D=7.5A
10
8
6
Qg- V_GS
V_DS = 120V
V_DS = 300V
V_DS = 480V
4
2
0
0
5
10
15
20
25
30
Gate - Charge Qg (nC)
Safe Operation Area
10²
Operation in this
area is limited by RDS(ON)
10 µs
10¹
100µs
1ms
10⁰
10 ms
10^-1
Tc= 25 C
T_j = 150 C
Single nonrepetitive pulse
10^-2₁₀₀
10¹
100 ms
DC
10²
10³
Drain - Source Voltage V_DS (V)
(KHB7D5N60F1)
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