KHB7D5N60P1 Datasheet, PDF (1/7 Pages) KEC(Korea Electronics) – N CHANNEL MOS FIELD EFFECT TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
KHB7D5N60P1/F1
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for active power factor
correction and switching mode power supplies.
FEATURES
V_DSS=600V, I_D=7.5A
Drain-Source ON Resistance :
R_DS(ON)=1.2 @V_GS=10V
Qg(typ.)= 32.5nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
RATING
SYMBOL
UNIT
KHB7D5N60P1 KHB7D5N60F1
Drain-Source Voltage
Gate-Source Voltage
V_DSS
600
V
V_GSS
30
V
@T_C=25
Drain Current @T_C=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above 25
I_D
I_DP
E_AS
E_AR
dv/dt
P_D
7.5
7.5*
4.6
4.6*
30
30*
230
14.7
4.5
147
48
1.18
0.38
A
mJ
mJ
V/ns
W
W/
Maximum Junction Temperature
T_j
150
Storage Temperature Range
Thermal Characteristics
T_stg
-55 150
Thermal Resistance, Junction-to-Case R_thJC
0.85
Thermal Resistance, Case-to-Sink
R_thCS
0.5
Thermal Resistance,
Junction-to-Ambient
R_thJA
62.5
* : Drain current limited by maximum junction temperature.
2.6
/W
-
/W
62.5
/W
D
A
E
I
O
C
F
G
B
Q
K
P
M
L
J
D
NN
H
123
1. GATE
2. DRAIN
3. SOURCE
KHB7D5N60P1
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
MILLIMETERS
9.9 +_ 0.2
15.95 MAX
1.3+0.1/-0.05
0.8+_ 0.1
3.6 +_ 0.2
2.8+_ 0.1
3.7
0.5+0.1/-0.05
1.5
13.08+_ 0.3
1.46
1.4 +_ 0.1
1.27+_ 0.1
2.54 +_ 0.2
4.5 +_ 0.2
2.4 +_ 0.2
9.2 +_ 0.2
TO-220AB
A
E
P
K
L
D
MM
N 123
KHB7D5N60F1
C
F
O
B
G
J
Q
H
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 10.16 +_ 0.2
B 15.87 +_ 0.2
C 2.54 +_ 0.2
D
0.8 +_0.1
E 3.18 +_ 0.1
F
3.3 +_0.1
G 12.57 +_ 0.2
H
0.5 +_0.1
J 13.0 MAX
K _3.23 +_ _0.1
L 1.47 MAX
M 2.54 +_ 0.2
N
4.7 +_ 0.2
O 6.68 +_ 0.2
P
6.5
Q 2.76 +_ 0.2
TO-220IS
G
S
2005. 12. 27
Revision No : 0
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