KHB7D0N65P1 Datasheet, PDF (4/7 Pages) KEC(Korea Electronics) – N CHANNEL MOS FIELD EFFECT TRANSISTOR

KHB7D0N65P1/F1
4500
4000
3500
3000
2500
2000
1500
1000
500
0 _10-1
C - V_DS
Frequency = 1MHz
Ciss
Coss
Crss
10⁰
10¹
Drain - Source Voltage V_DS (V)
Safe Operation Area
Operation in this
10^{1 area is limited by RDS(ON)}
10⁰
100µs
1ms
10ms
100ms
DC
10^-1
Tc= 25 C
Tj = 150 C
10^{2 Single nonrepetitive pulse}
10⁰
10¹
10²
10³
Drain - Source Voltage V_DS (V)
(KHB7D0N65P1)
I_D - T_j
8
6
4
2
0
25
50
75
100
125
150
Junction Temperature Tj ( _C)
2006. 2. 20
Revision No : 1
Qg- V_GS
12
I_D=7A
10
8
6
V_DS = 520V
V_DS = 325V
V_DS = 130V
4
2
0
0 4 8 12 16 20 24 28 32
Gate - Charge Qg (nC)
Safe Operation Area
Operation in this
10^{1 area is limited by RDS(ON)}
10⁰
10 µs
100µs
1ms
10 ms
DC
10^-1
Tc= 25 C
T_j = 150 C
Single nonrepetitive pulse
10^-2₁₀₀
10¹
10²
10³
Drain - Source Voltage V_DS (V)
(KHB7D0N65F1)
4/7