KHB7D0N65P1 Datasheet, PDF (1/7 Pages) KEC(Korea Electronics) – N CHANNEL MOS FIELD EFFECT TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for active power factor
correction and switching mode power supplies.
FEATURES
V_DSS=650V, I_D=7A
Drain-Source ON Resistance :
R_DS(ON)=1.4 @V_GS=10V
Qg(typ.)= 32nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
RATING
SYMBOL
UNIT
KHB7D0N65P1 KHB7D0N65F1
Drain-Source Voltage
Gate-Source Voltage
V_DSS
V_GSS
650
V
30
V
@T_C=25
Drain Current @T_C=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above 25
I_D
I_DP
E_AS
E_AR
dv/dt
P_D
7
7*
4.2
4.2*
28
28*
212
1.6
4.5
160
52
1.28
0.42
A
mJ
mJ
V/ns
W
W/
Maximum Junction Temperature
T_j
Storage Temperature Range
T_stg
150
-55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case R_thJC
0.78
Thermal Resistance, Case-to-Sink
R_thCS
0.5
Thermal Resistance,
Junction-to-Ambient
R_thJA
62.5
* : Drain current limited by maximum junction temperature.
2.4
/W
-
/W
62.5
/W
KHB7D0N65P1/F1
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
A
E
I
O
C
F
G
B
Q
K
P
M
L
J
D
NN
H
123
1. GATE
2. DRAIN
3. SOURCE
KHB7D0N65P1
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
MILLIMETERS
9.9 +_ 0.2
15.95 MAX
1.3+0.1/-0.05
0.8+_ 0.1
3.6 +_ 0.2
2.8+_ 0.1
3.7
0.5+0.1/-0.05
1.5
13.08+_ 0.3
1.46
1.4 +_ 0.1
1.27+_ 0.1
2.54 +_ 0.2
4.5 +_ 0.2
2.4 +_ 0.2
9.2 +_ 0.2
TO-220AB
A
E
P
K
L
D
MM
N 123
KHB7D0N65F1
C
F
O
B
G
J
Q
H
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 10.16 +_ 0.2
B 15.87 +_ 0.2
C 2.54 +_ 0.2
D
0.8 +_0.1
E 3.18 +_ 0.1
F
3.3 +_0.1
G 12.57 +_ 0.2
H
0.5 +_0.1
J 13.0 MAX
K _3.23 +_ _0.1
L 1.47 MAX
M 2.54 +_ 0.2
N
4.7 +_ 0.2
O 6.68 +_ 0.2
P
6.5
Q 2.76 +_ 0.2
TO-220IS
D
2006. 2. 20
Revision No : 1
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