KGT25N120NDA Datasheet, PDF (4/8 Pages) KEC(Korea Electronics) – SEMICONDUCTOR TECHNICAL DATA

KGT25N120NDA
Typical Performance Characteristics
Fig 1. Saturation Voltage Characteristics
180
160
140
120
100
80
60
40
20
0
0
20V _12V
10V
15V
8V
Common Emitter
T_C=25 C
2
4
6
8
10
Collector - Emitter Voltage V_CE (V)
Fig 3. Saturation Voltage vs. Case Temperature
3.0
Common Emitter
V_GE = 15V
40A
2.5
2.0
I_C = 25A
1.5
25
50
75
100
125
Case Temperature T_C ( C)
Fig 5. Saturation Voltage vs. V_GE
20
Common Emitter
T_C = 125 C
16
12
8
40A
4
25A
I_C = 12.5A
0
0
4
8
12
16
20
Gate - Emitter Voltage V_GE (V)
Fig 2. Saturation Voltage Characteristics
100
Common Emitter
V_GE = 15V
80 ^TC ^{= 25 C}
T_C = _{125 C}
60
40
20
0
0
1
2
3
4
5
Collector - Emitter Voltage V_CE (V)
Fig 4. Saturation Voltage vs. V_GE
20
Common Emitter
T_C = 25 C
16
12
8
4
40A
25A
I_C = 12.5A
0
0
4
8
12
16
20
Gate - Emitter Voltage V_GE (V)
Fig 6. Capacitance Characteristics
5000
Ciss
4500
4000
3500
3000
2500 ^Coss
2000
1500
1000
500 ^Crss
0
1
Common Emitter
V_GE
T_C =
= 0V,
25 ^C
f
=
1MHZ
10
40
Collector - Emitter Voltage V_CE (V)
2009. 10. 29
Revision No : 0
4/8