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KGT25N120NDA Datasheet, PDF (2/8 Pages) KEC(Korea Electronics) – SEMICONDUCTOR TECHNICAL DATA
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KGT25N120NDA
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Static
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Gate Leakage Current
Gate Threshold Voltage
Collector-Emitter Saturation Voltage
Dynamic
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Input Capacitance
Ouput Capacitance
Reverse Transfer Capacitance
BVCES
ICES
IGES
VGE(th)
VCE(sat)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Cies
Coes
Cres
VGE=0V , IC=1mA
VGE=0V, VCE=1200V
VCE=0V, VGE= 20V
VGE=VCE, IC=25mA
VGE=15V, IC=25A
VGE=15V, IC=25A, TC = 125
VGE=15V, IC=50A
VCC=600V, VGE=15V, IC= 25A
VCC=600V, IC=25A, VGE=15V,RG=10
Inductive Load, TC = 25
VCC=600V, IC=25A, VGE=15V, RG=10
Inductive Load, TC = 125
VCE=30V, VGE=0V, f=1MHz
MIN. TYP. MAX. UNIT
1200
-
-
V
-
-
1.0
mA
-
-
100 nA
4.0
5.5
7.0
V
-
1.95 2.30
V
-
2.25
-
V
-
2.50
-
V
-
200 300
nC
-
20
-
nC
-
80
-
nC
-
60
-
ns
-
50
-
ns
-
290
-
ns
-
100
-
ns
-
4.1
6.1
mJ
-
0.86 1.4
mJ
-
4.96 7.5
mJ
-
60
-
ns
-
50
-
ns
-
300
-
ns
-
150
-
ns
-
4.3
6.3
mJ
-
1.2
2.1
mJ
-
5.5
8.4
mJ
-
3100
-
pF
-
100
-
pF
-
80
-
pF
2009. 10. 29
Revision No : 0
2/8
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