KF60N06P Datasheet, PDF (4/6 Pages) KEC(Korea Electronics) – N CHANNEL MOS FIELD EFFECT TRANSISTOR

KF60N06P
10000
1000
100
Fig 7. C - V_DS
Ciss
Coss
Crss
10
0 5 10 15 20 25 30 35 40
Drain - Source Voltage V_DS (V)
Fig 8. Qg - V_DS
10
8
6
VDS=48V
4
2
0
0
10
20
30
40
50
Gate - Charge Qg (nC)
1000
100
10
1
Fig 9. Safe Operation Area
R DS(ON)^Limited
10µs
100µs
1ms
10ms
DC
0.1
0.1
1
10
100
Drain - Source Voltage V_DS (V)
Fig 10. I_D - T_C
70
60
50
40
30
20
10
0
0 25 50 75 100 125 150 175
Case Temperature T_C ( C)
Fig 11. R_th (j-c)
10
2009. 12.21
1
Duty=0.5
0.2
P_DM
t₁
0.1 0.1
t₂
0.05
- Duty Factor, D= t₁/
0.02
0.01
0.01
Single Pulse
- R_thJC =
Tj(max) - Tc
P_D
10^-5
10^-4
10^-3
10^-2
10^-1
10⁰
10¹
Pulse Time (S)
Revision No : 0
4/6