KF60N06P Datasheet, PDF (1/6 Pages) KEC(Korea Electronics) – N CHANNEL MOS FIELD EFFECT TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for active power factor
correction , electronic lamp ballasts based on half bridge topology,
DC/DC Converters and switching mode power supplies.
FEATURES
V_DSS = 60V, I_D = 60A
Drain-Source ON Resistance :
R_DS(ON) =13.2m (Max.) @V_GS = 10V
Qg(typ.) = 48nC
MOSFET MAXIMUM RATING (Ta=25 Unless otherwise noted)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Drain-Source Voltage
Gate-Source Voltage
V_DSS
V_GSS
60
V
20
V
@T_C=25
Drain Current @T_C=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above 25
I_D*
I_DP
E_AS
E_AR
dv/dt
P_D
60
37
A
230
430
mJ
13.5
mJ
4.5
V/ns
113
W
0.90
W/
Maximum Junction Temperature
T_j
Storage Temperature Range
T_stg
150
-55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case R_thJC
1.1
/W
Thermal Resistance,
Junction-to-Ambient
R_thJA
62.5
/W
* : Drain current limited by maximum junction temperature.
KF60N06P
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
A
E
I
O
C
F
G
B
Q
K
P
M
L
J
D
NN
H
123
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A
9.9 +_ 0.2
B 15.95 MAX
C 1.3+0.1/-0.05
D
0.8 +_ 0.1
E
3.6 +_ 0.2
F
2.8 +_ 0.1
G
3.7
H 0.5+0.1/-0.05
I
1.5
J 13.08 +_ 0.3
K
1.46
L
1.4 +_ 0.1
M
1.27 +_ 0.1
N 2.54 +_ 0.2
O
4.5 +_ 0.2
P
2.4 +_ 0.2
Q
9.2 +_ 0.2
TO-220AB
PIN CONNECTION
D
G
S
2009. 12.21
Revision No : 0
1/6