KMB7D0NP30QA_11 Datasheet, PDF (3/9 Pages) KEC(Korea Electronics) – N and P-Ch Trench MOSFET

KMB7D0NP30QA
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Dynamic
TEST CONDITION
Total Gate Charge
N-Ch
: V_DS=15V, I_D=6.6A,
V_GS=10V
(Fig.1)
P-Ch
: V_DS=-15V, I_D=-5A,
V_GS=-10V
(Fig.3)
Q_g
N-Ch
: V_DS=15V, I_D=6.6A,
V_GS=4.5V
(Fig.1)
P-Ch
: V_DS=-15V, I_D=-5A,
V_GS=-4.5V
(Fig.3)
Gate-Source Charge
Gate-Drain Charge
N-Ch
Q_gs
: V_DS=15V, I_D=6.6A,
V_GS=10V
(Fig.1)
P-Ch
Q_gd
: V_DS=-15V, I_D=-5A,
V_GS=-10V
(Fig.3)
Turn-on Delay time
Turn-on Rise time
Turn-off Delay time
Turn-off Fall time
t_d(on)
t_r
t_d(off)
t_f
N-Ch
: V_DD=15V, I_D=6.6A,
V_GS=10V, R_G=3
(Fig.2)
P-Ch
: V_DD=-15V, V_GS=-10V,
R_G=3 , R_L=2.7
(Fig.4)
Input Capacitance
Output Capacitance
Reverse transfer Capacitance
C_iss
N-Ch
C_oss
: V_DS=15V, V_GS=0V, f=1.0MHz
P-Ch
: V_DS=-15V, V_GS=0V, f=1.0MHz
C_rss
Note 1>* Pulse test : Pulse width 300 , Duty Cycle 2%.
MIN. TYP. MAX. UNIT
N-Ch -
16.4 20.5
P-Ch -
13
16
N-Ch -
7.2
9
nC
P-Ch -
6.25 7.8
N-Ch -
4
-
P-Ch -
2.6
-
N-Ch -
2.6
-
P-Ch -
2.9
-
N-Ch -
7.4
-
P-Ch -
4.7
-
N-Ch -
27.7
-
P-Ch -
7.8
-
ns
N-Ch -
12.2
-
P-Ch -
47.2
-
N-Ch -
7.6
-
P-Ch -
22.6
-
N-Ch -
742
-
P-Ch -
820
-
N-Ch -
126
-
pF
P-Ch -
137
-
N-Ch -
76
-
P-Ch -
89
-
2011. 3. 18
Revision No : 3
3/9