KMB7D0NP30QA_11 Datasheet, PDF (1/9 Pages) KEC(Korea Electronics) – N and P-Ch Trench MOSFET

SEMICONDUCTOR
TECHNICAL DATA
General Description
Switching regulator and DC-DC Converter applications.
It’s mainly suitable for Back-light Inverter.
FEATURES
N-Channel
: V_DSS=30V, I_D=7A.
: R_DS(ON)=23.5m (Max.) @ V_GS=10V
: R_DS(ON)=39m (Max.) @ V_GS=4.5V
P-Channel
: V_DSS=-30V, I_D=-5A.
: R_DS(ON)=45.5m (Max.) @ V_GS=-10V
: R_DS(ON)=80m (Max.) @ V_GS=-4.5V
Super High Dense Cell Design.
Reliable and rugged.
KMB7D0NP30QA
N and P-Ch Trench MOSFET
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Drain Current
DC
Pulsed ^(note1)
Source-Drain Diode Current
Drain Power Dissipation
Maximum Junction Temperature
Storage Temperature Range
V_DSS
V_GSS
I_D*
I_DP
I_S
P_D*
T_j
T_stg
Thermal Resistance, Junction to Ambient R_thJA*
Note : *Sorface Mounted on FR4 Board
N-Ch
P-Ch
30
-30
20
20
7
-5
29
-20
1.7
-1.7
2
150
-55 150
62.5
UNIT
V
V
A
A
W
/W
PIN CONNECTION (TOP VIEW)
2011. 3. 18
Revision No : 3
1/9