TIP33C Datasheet, PDF (2/2 Pages) STMicroelectronics – COMPLEMENTARY SILICON POWER TRANSISTORS

TIP33C
V_CE(sat) - I _C
1
COMMON EMITTER
0.5 ^I C ^/CB ⁼¹⁰
0.3
0.1
0.05
0.03
0.01
0.001
0.01
0.1
1
10
BASE CURRENT I _C (A)
r _th - t _w
10 _{CURVES SHOULD BE APPLIED IN}
5
THERMAL LIMITED AREA.
(SIGLE NONREPETITIVE PULSE)
3
1
NO ^{HEAT SINK}
0.5
0.3
0.1
1
3 10 30 100 300 1K 2K
PULSE WIDTH t _w (sec)
h _FE - I _C
1K
V_CE =4V
500
300
Tc=125 ^C
100
Tc=25 ^C
Tc=-30 C
50
30
10
0.001
0.01
0.1
1
10
COLLECTOR CURRENT I _C (A)
f_T - I _E
30
V_CE =-12V
20
TcT=c1=T225c5=C-C30 _C
10
0
-0.01 -0.03 -0.1 -0.3 -1
-3 -10
EMITTER CURRENT I _E (A)
100
80
60
40
20
0
0
Pc - Ta
Tc=Ta
INFINITE HEAT SINK
25
50
75 100 125 150
AMBIENT TEMPERATURE Ta ( C)
2001. 1. 10
Revision No : 1
SAFE OPERATING AREA
-30
I _C MAX.(PULSED)*
-10
-5
-3
I _C MAX
(CONTINUOUS)
DCTcO=P2E51R0CAmTSI*ON
-1
-0.5
-0.3
-0.1
-0.05
-0.03
-1
*
SINGLE NONREPETITIVE
PLUSE Ta=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
-3
-10
-30
-100 -200
COLLECTOR-EMITTER VOLTAGE V_CE (V)
2/2