TIP33C Datasheet, PDF (1/2 Pages) STMicroelectronics – COMPLEMENTARY SILICON POWER TRANSISTORS

SEMICONDUCTOR
TECHNICAL DATA
HIGH POWER AMPLIFIER APPLICATION.
FEATURES
ᴌComplementary to TIP34C.
ᴌRecommended for 45Wᴕ50W Audio Frequency
Amplifier Output Stage.
MAXIMUM RATING (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
(Tc=25á´±)
Junction Temperature
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
Storage Temperature Range
T_stg
RATING
100
100
6
10
3
80
150
-55ᴕ150
UNIT
V
V
V
A
A
W
á´±
á´±
TIP33C
EPITAXIAL PLANAR NPN TRANSISTOR
A
Q
B
K
D
d
PP
1 23
1. BASE
DIM MILLIMETERS
A
15.9 MAX
B
4.8 MAX
C
20.0+_ 0.3
D
2.0+_ 0.3
d
1.0+0.3/-0.25
E
2.0
F
1.0
G
3.3 MAX
H
9.0
I
4.5
T
MJ
2.0
K
1.8 MAX
L
20.5+_ 0.5
M
2.8
P
5.45+_ 0.2
Q
Φ3.2+_ 0.2
T
0.6+0.3/-0.1
2. COLLECTOR (HEAT SINK)
3. EMITTER
TO-3P(N)
ELECTRICAL CHARACTERISTICS (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
I_CBO
Emitter Cut-off Current
I_EBO
Collector-Emitter Breakdown Voltage
V_(BR)CEO
DC Current Gain
h_FE (Note)
Collector-Emitter Saturation Voltage
V_CE(sat)
Transition Frequency
f_T
Collector Output Capacitance
C_ob
Note : h_FE Classification R:55~110, O:80~160
TEST CONDITION
V_CB=100V, I_E=0
V_EB=6V, I_C=0
I_C=25mA, I_B=0
V_CE=4V, I_C=2A
I_C=4A, I_B=0.4A
V_CE=12V, I_C=0.5A
V_CB=10V, I_E=0, f=1MHz
MIN.
-
-
100
55
-
-
-
TYP.
-
-
-
-
-
20
150
MAX.
10
10
-
160
1.0
-
-
UNIT
ỌA
ỌA
V
V
MHz
pF
2001. 1. 10
Revision No : 1
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