TIP117F Datasheet, PDF (2/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)

TIP117F
-5
-4 _-900µA
-800µA
-3 ^-700µA
-600µA
-2
-1
I _C - V_CE
-1000^µA
-500^{µA-400µA}
-300^µA
-200µA
I_B =-100µA
0
-1
-2
-3
-4
-5
COLLECTOR-EMITTER VOLTAGE V _CE (V)
100K
30K
10K
300
100
30
10
-0.01
h _FE - I _C
V_CE =-4V
-0.1
-1
-10
COLLECTOR CURRENT I _C (A)
100
30
10
3
1
0.3
0.1
0.01
V_BE(sat) , V _CE(sat) - I _C
I _C /I _B =500
V BE(sat)
V_CE(sat)
0.1
1
10
COLLECTOR CURRENT I _C (A)
30
25
20
15
10
5
0
0
P _D - Ta
50
100
150
200
CASE TEMPERATURE Ta ( C)
2002. 6. 25
Revision No : 0
C _ob - V_CB
1k
f=0.1MHz
500
300
100
50
30
10
5
3
1
-0.01
-0.1
-1
-10
-100
COLLECTOR-BASE VOLTAGE V_CB (V)
SAFE OPERATING AREA
10
5 ^IC ^MAX(PULSED)
3
DC OPERATION
Tc=25 C
1
0.5
SINGLE NONREPETITIVE
0.3
PULSE Tc=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN
TEMPERATURE
0.1
1
3 5 10
30 50 100
COLLECTOR-EMITTER VOLTAGE V_CE (V)
2/2