TIP117F Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)

SEMICONDUCTOR
TECHNICAL DATA
TIP117F
EPITAXIAL PLANAR PNP TRANSISTOR
MONOLITHIC CONSTRUCTION WITH BUILT IN
BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.
FEATURES
High DC Current Gain.
: h_FE=1000(Min.), V_CE=-4V, I_C=-1A.
Low Collector-Emitter Saturation Voltage.
Complementary to TIP112F.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Base Current
DC
V_CBO
V_CEO
V_EBO
I_C
I_CP
I_B
Collector Power
Ta=25
Dissipation
P_C
Tc=25
Junction Temperature
T_j
Storage Temperature Range
T_stg
RATING
-100
-100
-5
-2
-4
-50
2
20
150
-65 150
UNIT
V
V
V
A
mA
W
A
U
E
L
L
M
D
D
NN
T
T
123
C
DIM MILLIMETERS
A
10.30 MAX
B
15.30 MAX
C
2.70Ź0.30
S
D
0.85 MAX
E
Φ3.20Ź0.20
F
3.00Ź0.30
G
12.30 MAX
T
RH
0.75 MAX
J
13.60Ź0.50
K
3.90 MAX
L
1.20
V
M
1.30
N
2.54
O
4.50Ź0.20
P
6.80
Q
2.60Ź0.20
H
R
S
10Ɓ
25Ş
T
5Ş
U
0.5
V
2.60Ź0.15
1. BASE
2. COLLECTOR
3. EMITTER
TO-220IS
EQUIVALENT CIRCUIT
C
B
R1
= 10kΩ
R₂
= 0.6kΩ
E
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
I_CEO
Collector Cut-off Current
I_CBO
Emitter Cut-off Current
I_EBO
DC Current Gain
h_FE
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Output Capacitance
V_CEO(SUS)
V_CE(sat)
V_BE(ON)
C_ob
TEST CONDITION
V_CE=-50V, I_B=0
V_CB=-100V, I_E=0
V_EB=-5V, I_C=0
V_CE=-4V, I_C=-1A
V_CE=-4V, I_C=-2A
I_C=-30mA, I_B=0
I_C=-2A, I_B=-8mA
V_CE=-4V, I_C=-2A
V_CB=-10V, I_E=0, f=0.1MHz
MIN.
-
-
-
1000
500
-100
-
-
-
TYP.
-
-
-
-
-
-
-
-
-
MAX.
-2
-1
-2
-
-
-
-2.5
-2.8
200
UNIT
mA
mA
V
V
V
pF
2002. 6. 25
Revision No : 0
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