KU034N08P Datasheet, PDF (2/7 Pages) KEC(Korea Electronics) – N-ch Trench MOS FET

KU034N08P
ELECTRICAL CHARACTERISTICS (Tc=25)
CHARACTERISTIC
Static
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain Cut-off Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source ON Resistance
Dynamic
SYMBOL
TEST CONDITION
BV_DSS
I_D=250ǺA, V_GS=0V
ǚBV_DSS/ǚT_j I_D=5mA, Referenced to 25
I_DSS
V_DS=75V, V_GS=0V,
V_th
V_DS=V_GS, I_D=250ǺA
I_GSS
V_GS=‚20V, V_DS=0V
R_DS(ON)
V_GS=10V, I_D=80A
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay time
Turn-on Rise time
Turn-off Delay time
Turn-off Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode Ratings
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
C_iss
C_oss
C_rss
V_DS=60V, I_D=80A
V_GS=10V
(Note4,5)
V_DD=37V
I_D=80A
R_G=25ʃ
(Note4,5)
V_DS=25V, V_GS=0V, f=1.0MHz
Continuous Source Current
Pulsed Source Current
I_S
V_GS<V_th
I_SP
Diode Forward Voltage
V_SD
I_S=80A, V_GS=0V
Reverse Recovery Time
Reverse Recovery Charge
t_rr
I_S=80A, V_GS=0V,
Q_rr
dIs/dt=300A/Ǻs
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L =100uH, I_S=100A, V_DD=60V, R_G=25ʃ, Starting T_j=25.
Note 3) I_S†80A, dI/dt†200A/ɫ, V_DD†BV_DSS, Starting T_j=25.
Note 4) Pulse Test : Pulse width † 300ɫ, Duty Cycle † 2%.
Note 5) Essentially independent of operating temperature.
Marking
MIN. TYP. MAX. UNIT
75
-
-
V
-
0.07
-
V/
-
-
10
uA
2.0
-
4.0
V
-
- ‚100 nA
-
3.0
3.4 mʃ
-
185
-
-
45
-
nC
-
60
-
-
160
-
-
250
-
ns
-
550
-
-
230
-
- 10,900 -
-
1,150
-
pF
-
470
-
-
-
137
A
-
-
548
-
-
1.4
V
-
75
-
ns
-
0.5
-
uC
2012. 5. 14
Revision No : 0
2/7