KU034N08P Datasheet, PDF (1/7 Pages) KEC(Korea Electronics) – N-ch Trench MOS FET

SEMICONDUCTOR
TECHNICAL DATA
General Description
This Trench MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for DC/DC Converter,
Synchronous Rectification and a load switch in battery powered
applications
FEATURES
K
hV_DSS= 75V, I_D= 170A
hDrain-Source ON Resistance :
R_DS(ON)=3.4mʃ(Max.) @V_GS = 10V
MAXIMUM RATING (Tc=25)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Drain-Source Voltage
Gate-Source Voltage
@T_C=25
Drain Current @T_C=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above 25
V_DSS
V_GSS
I_D
I_DP
E_AS
E_AR
dv/dt
P_D
75
‚20
170*
106
424*
1,000
19
4.5
192
1.54
V
V
A
mJ
mJ
V/ns
W
W/
Maximum Junction Temperature
T_j
150

Storage Temperature Range
Thermal Characteristics
T_stg
-55 ~ 150

Thermal Resistance, Junction-to-Case R_thJC
0.65
/W
Thermal Resistance,
Junction-to-Ambient
R_thJA
62.5
/W
* : Drain current limited by maximum junction temperature.
Calculated continuous Current based on maximum allowable junction temperature
PIN CONNECTION
KU034N08P
N-ch Trench MOS FET
2012. 5. 14
Revision No : 0
1/7