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| KTX213E Datasheet, PDF (2/4 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP/NPN TRANSISTOR | |||
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KTX213E
Q1 ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
SYMBOL
ICBO
V(BR)CBO
V(BR)CEO
V(BR)EBO
hFE
VCE(sat)
fT
Cob
TEST CONDITION
VCB=-15V, IE=0
IE=-10 A
IC=-1mA
IE=-10 A
VCE=-2V, IC=-10mA
IC=-200mA, IB=-10mA
VCE=-2V, IC=-10mA, fT=100MHz
VCB=-10V, IE=0, f=1MHz
MIN.
-
-15
-12
-6
270
-
-
-
TYP.
-
-
-
-
-
-100
260
6.5
MAX.
-100
-
-
-
680
-250
-
-
UNIT
nA
V
V
V
-
mV
MHz
pF
Q2 ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Output Cut-off Current
IO(OFF)
DC Current Gain
GI
Output Voltage
VO(ON)
Input Voltage (ON)
VI(ON)
Input Voltage (OFF)
VI(OFF)
Transition Frequency
fT *
Input Current
II
Note : * Characteristic of Transistor Only.
VO=50V, VI=0
VO=5V, IO=10
IO=10 , II=0.5
VO=0.2V, IO=5
VO=5V, IO=0.1
VO=10V, IO=5
VI=5V
MIN.
-
20
-
-
1.0
-
-
TYP.
-
-
0.1
2.8
1.2
200
-
MAX.
500
-
0.3
5.0
-
-
0.18
UNIT.
V
V
V
2008. 9. 23
Revision No : 1
2/4
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