KTX213E Datasheet, PDF (1/4 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP/NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
KTX213E
EPITAXIAL PLANAR PNP/NPN TRANSISTOR
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
Including two devices in TES6.
(Thin Extreme Super mini type with 6 leads.)
With Built-in bias resistors.
Simplify circuit design.
Reduce a quantity of parts and manufacturing process.
EQUIVALENT CIRCUIT
Q₁
C
Q₂
OUT
B
R1
IN
Q₂
R1=47KΩ
R2=47KΩ
R2
E
COMMON
EQUIVALENT CIRCUIT (TOP VIEW)
6
5
4
Q1
Q2
1
2
3
Q1 MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
* Single pulse Pw=1mS.
Q2 MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Output Voltage
Input Voltage
Output Current
Q1, Q2 MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Power Dissipation
Junction Temperature
Storage Temperature Range
* Total Raing.
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_CP *
SYMBOL
V_O
V_I
I_O
SYMBOL
P_D *
T_j
T_stg
B
B1
1
6
DIM MILLIMETERS
A
1.6+_ 0.05
A1
1.0+_ 0.05
2
5
B
1.6 +_0.05
B1
1.2+_ 0.05
3
4
C
0.50
D
0.2+_ 0.05
H
0.5+_ 0.05
J
0.12+_ 0.05
P
P
P
5
1. Q₁ (EMITTER)
2. Q₁ (BASE)
3. Q₂ OUT (COLLECTOR)
4. Q₂ COMMON (EMITTER)
5. Q₂ IN (BASE)
6. Q₁ (COLLECTOR)
Marking
TES6
6
5
4
BH ^{Type Name}
Lot No.
1
2
3
RATING
-15
-12
-6
-500
-1
UNIT
V
V
V
RATING
50
40, -10
100
RATING
200
150
-55 150
UNIT
V
V
UNIT
2008. 9. 23
Revision No : 1
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