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KML0D4P20E Datasheet, PDF (2/4 Pages) KEC(Korea Electronics) – P-Ch Trench MOSFET
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KML0D4P20E
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Static
Drain-Source Breakdown Voltage
BVDSS ID= -250ǺA, VGS=0V
Drain Cut-off Current
IDSS
VGS=0V, VDS= -16V
Gate Leakage Current
Gate Threshold Voltage
IGSS
VGS=‚4.5V, VDS=0V
Vth
VDS=VGS, ID= -250ǺA
VGS= -4.5V, ID= -350mA
Drain-Source ON Resistance
RDS(ON)
VGS= -2.5V, ID= -300mA
VGS= -1.8V, ID= -150mA
Forward Transconductance
gfs
VDS= -5V, ID= -350mA
Source-Drain Diode Forward Voltage VSD
IS= -150mA, VGS=0V
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
QgS
VDS= -10V, ID= -350mA, VGS= -4.5V
Gate-Drain Charge
Qgd
Turn-on Delay time
Turn-on Rise time
Turn-off Delay time
Turn-off Fall time
td(on)
tr
td(off)
tf
VDD= -10V, VGS= -4.5V
ID= -350mA, RG=10ʃ
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VDS=-10V, VGS=0V,
f=1.0MHZ
Note 3) Pulse test : Pulse width 300 Duty Cycle 2%.
MIN.
(Note 3)
(Note 3)
(Note 3)
(Note 3)
(Note 3)
-20
-
-
-0.45
-
-
-
-
-
-
(Note 3) -
-
-
-
(Note 3) -
-
-
-
-
TYP. MAX. UNIT
-
-
V
-
-100 nA
-
‚10 ǺA
-
-1.0
V
0.8 1.20
1.2 1.60 ʃ
1.8 2.70
1.0
-
S
-0.8 -1.2
V
1500
-
150
-
pC
450
-
5
-
3
-
ns
14
-
5
-
55
-
16
-
pF
6
-
2015. 1. 15
Revision No : 2
2/4
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