KML0D4P20E Datasheet, PDF (1/4 Pages) KEC(Korea Electronics) – P-Ch Trench MOSFET

SEMICONDUCTOR
TECHNICAL DATA
General Description
It s Mainly Suitable for Load Switching Mobile Phones, Battery Powered
Systems and Level-Shifter.
FEATURES
hV_DSS= -20V, I_D= -0.35A
hDrain-Soure ON Resistance
: R_DS(ON)=1.2ʃ @ V_GS= -4.5V
: R_DS(ON)=1.6ʃ @ V_GS= -2.5V
: R_DS(ON)=2.7ʃ @ V_GS= -1.8V
hESD Protection diode.
KML0D4P20E
P-Ch Trench MOSFET
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL P-Ch UNIT
Drain-Source Voltage
V_DSS
-20
V
Gate-Source Voltage
V_GSS
‚6
V
Drain Current
DC @T_A=25 (Note 1)
I_D
DC @T_A=85 (Note 1)
-350
-255
mA
Pulsed
(Note 1) I_DP
-1400
Drain Power Dissipation
Maximum Junction Temperature
Storage Temperature Range
(Note 2) P_D
210
mW
T_j
150

T_{stg -55q150 }
Thermal Resistance, Junction to Ambient (Note 2) R_thJA
600
Note 1) Drain current limited by maximum junction temperature
Note 2) Surface Mounted on 1˃1Ë FR4 Board
/W
2015. 1. 15
Revision No : 2
1/4