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KMB3D0P30SA_15 Datasheet, PDF (2/4 Pages) KEC(Korea Electronics) – P-Ch Trench MOSFET
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KMB3D0P30SA
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
Static
Drain to Source Breakdown Voltage
Drain Cut-off Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Drain to SourceSource On Resistance
On State Drain Current
Forward Transconductance
Dynamic
SYMBOL
TEST CONDITION
BVDSS
IDSS
IGSS
Vth
RDS(ON)
ID(ON)
gfs
IDS=-250ǺA, VGS=0V,
VGS=0V, VDS=-24V
VGS=0V, VDS=-24V, Tj=55
VGS=‚20V, VDS=0V
VDS=VGS, ID=250ǺA
VGS=-10V, ID=-3A
VGS=-4.5V, ID=-2.5A
VGS=-10V, VDS=-5V
VDS=-10V, ID=-3A
(Note2)
(Note2)
(Note2)
(Note2)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn-on Delay time
Turn-on Rise time
Turn-off Delay time
Turn-off Fall time
Source-Drain Diode Ratings
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS=-15V, VGS= 0V, f=1MHz,
VDS=-15V, VGS=-10V, ID=-3A (Note2)
VDD=-15V, VGS=-10V
ID=-1A, RG=6ʃ
(Note2)
Continuous Source Current
Pulsed Source Current
Source to Drain Forward Voltage
IS
-
ISP
-
VSD
VGS=0V, IS=-1.25A
(Note2)
(Note2)
Note2) Pulse Test : Pulse width <300É« , Duty cycle < 2%
MIN. TYP. MAX. UNIT
-30
-
-
V
-
-
-1
ǺA
-
-
-10
-
-
‚100 nA
-1.0
-
-3.0
V
-
64
80
mʃ
-
103 140
-12
-
-
A
-
4.5
-
S
-
365
-
-
72
-
pF
-
37
-
-
6.3
-
-
1.1
-
nC
-
1.6
-
-
6.9
-
-
16
-
ns
-
18
-
-
15
-
-
-
-3.0
A
-
-
-12
A
-
-
-1.2
V
2009. 8. 17
Revision No : 2
2/4
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