KMB3D0P30SA_15 Datasheet, PDF (1/4 Pages) KEC(Korea Electronics) – P-Ch Trench MOSFET

SEMICONDUCTOR
TECHNICAL DATA
General Description
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for portable equipment.
FEATURES
hV_DSS=-30V, I_D=-3A
hDrain to Source On-state Resistance.
R_DS(ON)=80mʃ(Max.) @ V_GS=-10V
R_DS(ON)=140mʃ(Max.) @ V_GS=-4.5V
hSuper High Dense Cell Design
KMB3D0P30SA
P-Ch Trench MOSFET
E
L BL
DIM MILLIMETERS
A
2.93+_ 0.20
B 1.30+0.20/-0.15
2
3
C
1.30 MAX
D 0.40+0.15/-0.05
E 2.40+0.30/-0.20
1
G
1.90
H
0.95
J 0.13+0.10/-0.05
K
0.00 ~ 0.10
Q
P
P
L
0.55
M
0.20 MIN
N 1.00+0.20/-0.10
P
7
Q
0.1 MAX
M
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL P-Ch UNIT
Drain to Source Voltage
Gate to Source Voltage
Drain Current
DC@T_a=25(Note1)
Pulsed
(Note1)
Drain Power Dissipation
T_a=25
T_a=70
Maximum Junction Temperature
(Note1)
(Note1)
Storage Temperature Range
V_DSS
V_GSS
I_D
I_DP
P_D
T_j
T_stg
-30 V
‚20 V
-3
A
-12
1.25
W
0.8
150 
-55q150 
Thermal Resistance, Junction to Ambient (Note1)
Note1)Surface Mounted on 1uƒ1uFR4 Board, t†5sec.
R_thJA
100 /W
PIN CONNECTION (TOP VIEW)
D
3
3
2
1
G
S
2
1
2009. 8. 17
Revision No : 2
SOT-23
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