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KF5N50D Datasheet, PDF (2/6 Pages) KEC(Korea Electronics) – N CHANNEL MOS FIELD EFFECT TRANSISTOR
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KF5N50D/DZ
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Static
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain Cut-off Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source ON Resistance
Dynamic
BVDSS
ID=250 , VGS=0V
BVDSS/ Tj ID=250 , Referenced to 25
IDSS
VDS=500V, VGS=0V,
Vth
VDS=VGS, ID=250
IGSS
KF5N50D VGS= 30V, VDS=0V
KF5N50DZ VGS= 25V, VDS=0V
RDS(ON)
VGS=10V, ID=2.5A
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay time
Turn-on Rise time
Turn-off Delay time
Turn-off Fall time
Input Capacitance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
VDS=400V, ID=5A
VGS=10V
(Note4,5)
VDD=250V
RL=50
RG=25
(Note4,5)
KF5N50D VDS=25V, VGS=0V,
KF5N50DZ f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode Ratings
Coss
VDS=25V, VGS=0V, f=1.0MHz
Crss
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
IS
VGS<Vth
ISP
VSD
IS=5A, VGS=0V
Reverse Recovery Time
Reverse Recovery Charge
trr
IS=5A, VGS=0V,
Qrr
dIs/dt=100A/
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L=19.5mH, IS=5A, VDD=50V, RG=25 , Starting Tj=25 .
Note 3) IS 5A, dI/dt 100A/ , VDD BVDSS, Starting Tj=25 .
Note 4) Pulse Test : Pulse width 300 , Duty Cycle 2%.
Note 5) Essentially independent of operating temperature.
MIN. TYP. MAX. UNIT
500
-
-
V
-
0.55
-
V/
-
-
10
2.0
-
4.0
V
-
-
100 nA
-
-
10
-
1.10 1.4
-
12
-
-
3.4
-
nC
-
4.5
-
-
23
-
-
17
-
ns
-
40
-
-
13
-
-
510
-
-
440
-
pF
-
69
-
-
6
-
-
-
5
A
-
-
20
-
-
1.4
V
-
300
-
ns
-
3.1
-
C
Marking
1
1
KF5N50
KF5N50
D 801
2
DZ 801
2
1 PRODUCT NAME
2 LOT NO
2008. 12. 3
Revision No : 1
2/6
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