KF5N50D Datasheet, PDF (1/6 Pages) KEC(Korea Electronics) – N CHANNEL MOS FIELD EFFECT TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
KF5N50D/DZ
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for electronic ballast and
switching mode power supplies.
FEATURES
V_DSS= 500V, I_D= 4.3A
Drain-Source ON Resistance : R_DS(ON)=1.4
Qg(typ) = 12nC
(Max) @V_GS = 10V
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
@T_C=25
Drain Current @T_C=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above 25
Maximum Junction Temperature
Storage Temperature Range
Thermal Characteristics
V_DSS
V_GSS
I_D
I_DP
E_AS
E_AR
dv/dt
P_D
T_j
T_stg
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-
Ambient
R_thJC
R_thJA
RATING
500
30
4.3
2.7
13
270
8.6
20
59.5
0.48
150
-55 150
2.1
110
UNIT
V
V
A
mJ
mJ
V/ns
W
W/
/W
/W
A
C
D
B
H
J
E
G
FF
K
L
N
M
DIM MILLIMETERS
A 6.60 +_ 0.20
B 6.10 +_0.20
C 5.34 +_ 0.30
D 0.70 +_0.20
E 2.70 +_ 0.15
F 2.30 +_ 0.10
G 0.96 MAX
H 0.90 MAX
J 1.80 +_0.20
K 2.30 +_0.10
L 0.50 +_ 0.10
M 0.50 +_0.10
N 0.70 MIN
1
2
3
1. GATE
2. DRAIN
3. SOURCE
DPAK (1)
PIN CONNECTION
(KF5N50D)
D
G
S
(KF5N50DZ)
D
G
S
2008. 12. 3
Revision No : 1
1/6