KDV241E Datasheet, PDF (2/2 Pages) KEC(Korea Electronics) – SILICON EPITAXIAL PLANAR DIODE

KDV241E
I_R - T_j
10 ²
10
0
20
40
60
80
100
JUNCTION TEMPERATURE T _j ( C)
C _T - V_R
14
f=1MHz
12
Ta=25 C
10
8
6
4
2
0
0
1
10
REVERSE VOLTAGE V_R (V)
2007. 6. 11
Revision No : 0
2/2