KDV241E Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – SILICON EPITAXIAL PLANAR DIODE

SEMICONDUCTOR
TECHNICAL DATA
ANTENNA TUNNING APPLICATION
FEATURES
Low Tuning Voltage : V_T=3V.
High Capacitance Ratio : C_0.5V/C_3V=3.5(Min.)
Excellent C-V Characteristics, and Small Tracking Error.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage
V_R
Junction Temperature
T_j
Storage Temperature Range
T_stg
RATING
10
125
-55 125
UNIT
V
KDV241E
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
C
1
2
D
1. ANODE
2. CATHODE
E
F
DIM
A
B
C
D
E
F
MILLIMETERS
1.60 +_0.10
1.20 +_0.10
0.80 +_0.10
0.30+_ 0.05
0.60+_ 0.10
0.13+_ 0.05
ESC
Marking
Type Name
TM
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Current
Capacitance
Capacitance Ratio
Series Resistance
I_R
C_0.5V
C_1.5V
C_3V
C_0.5V/C_3V
r_S
TEST CONDITION
V_R=25V
V_R=0.5V, f=1MHz
V_R=1.5V, f=1MHz
V_R=3V, f=1MHz
-
V_R=0.5V, f=470MHz
MIN.
-
7.2
3.3
1.8
3.5
-
TYP.
-
-
-
-
-
-
MAX.
10
8.9
4.2
2
-
1.3
UNIT
nA
pF
-
2007. 6. 11
Revision No : 0
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