KDS160V_15 Datasheet, PDF (2/2 Pages) KEC(Korea Electronics) – SILICON EPITAXIAL PLANAR DIODE

KDS160V
3
10
2
10
10
1
-1
10
-2
10
0
I_F - V_F
0.2 0.4 0.6 0.8 1.0 1.2
FORWARD VOLTAGE V_F (V)
C_T - V_R
2.0
f=1MHz
Ta=25 C
1.6
1.2
0.8
0.4
0
0.1
0.3
1
3
10
30 100
REVERSE VOLTAGE V_R (R)
I_R - V_R
10
1
Ta=100 C
Ta=75 C
10^-1
Ta=50 C
10^-2
Ta=25 C
10^-3
0
20
40
60
80
REVERSE VOLTAGE V_R (V)
t_rr - I_F
100
Ta=25 C
50
Fig. 1
30
10
5
3
1
0.5
0.1
0.3
1
3
10
30 100
FORWARD CURRENT I_F (mA)
Fig. 1. REVERSE RECOVERY TIME(trr ) TEST CIRCUIT
INPUT
WAVEFORM
0
INPUT _0.01µF
DUT
-6V
50ns
E
OUTPUT
SAMPLING
OSCILLOSCOPE
(R_IN =50Ω)
I_F =10mA
0
I_R
PULSE GENERATOR
(R_OUT =50Ω)
2005. 12. 29
Revision No : 0
WAVEFORM
0.1 I_R
trr
2/2