KDS160V_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – SILICON EPITAXIAL PLANAR DIODE

SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
Small package : VSC.
Low forward voltage.
Fast reverse recovery time.
Small total capacitance.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Maximum (Peak) Reverse Voltage
Reverse Voltage
Maximum (Peak) Forward Current
Average Forward Current
Surge Current (10mS)
Power Dissipation
Junction Temperature
V_RM
85
V_R
80
I_FM
300
I_O
100
I_FSM
2
P_D *
100
T_j
150
Storage Temperature Range
T_stg
-55 150
* : Mounted on a glass epoxy circuit board of 20 20mm,
pad dimension of 4 4mm.
UNIT
V
V
mA
mA
A
mW
KDS160V
SILICON EPITAXIAL PLANAR DIODE
CATHODE MARK
2
1
B
DIM MILLIMETERS
A
A
1.4 +_ 0.05
B
1.0 +_ 0.05
C
0.6 +_ 0.05
D
0.28 +_0.03
E
0.5 +_ 0.05
F
0.12 +_ 0.03
1. ANODE
2. CATHODE
VSC
Marking
Type Name
UF
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Forward Voltage
Reverse Current
Total Capacitance
V_F(1)
V_F(2)
V_F(3)
I_R
C_T
Reverse Recovery Time
t_rr
TEST CONDITION
I_F=1mA
I_F=10mA
I_F=100mA
V_R=80V
V_R=0V, f=1MHz
I_F=10mA
MIN.
-
-
-
-
-
-
TYP.
0.60
0.72
0.90
-
0.9
1.6
MAX.
-
-
1.20
0.5
3.0
4.0
UNIT
V
A
pF
nS
2005. 12. 29
Revision No : 0
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