 English |
|
|
|
|
|
|
|
| KDS123V_15 Datasheet, PDF (2/3 Pages) KEC(Korea Electronics) – SILICON EPITAXIAL PLANAR DIODE | |||
| |||
| ◁ |
KDS123V
100
Ta=25 C
10
1
IF - VF
D1, D3
0.1
0.01
0.001
0
0.2 0.4 0.6 0.8 1.0 1.2
FORWARD VOLTAGE VF (V)
1
Ta=25 C
0.1
IR - VR
0.01
D1, D3
0.001
0 10 20 30 40 50 60 70 80
REVERSE VOLTAGE VR (V)
CT - VR
10
f=1MHz
Ta=25 C
1
D1, D3
0.1
0 5 10 15 20 25 30 35 40 45
REVERSE VOLTAGE VR (V)
2007. 10. 31
Revision No : 0
100
Ta=25 C
10
1
IF - VF
D2, D4
0.1
0.01
0.001
0
0.2 0.4 0.6 0.8 1.0 1.2
FORWARD VOLTAGE VF (V)
1
Ta=25 C
0.1
IR - VR
0.01
D2, D4
0.001
0 10 20 30 40 50 60 70 80
REVERSE VOLTAGE VR (V)
CT - VR
10
f=1MHz
Ta=25 C
1
D2, D4
0.1
0 5 10 15 20 25 30 35 40 45
REVERSE VOLTAGE VR (V)
2/3
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese