KDS123V_15 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – SILICON EPITAXIAL PLANAR DIODE

SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
Low Forward Voltage
Fast Reverse Recovery Time
Small Total Capacitance
Ultra- Small Surface Mount Package
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Maximum (Peak) Reverse Voltage
Reverse Voltage
Maximum (Peak) Forward Current
Average Forward Current
V_RM
V_R
I_FM
I_O
80
80
300*
100*
Surge Current (10mS)
I_FSM
2*
Power Dissipation
P_D
100
Junction Temperature
T_j
150
Storage Temperature Range
T_stg
-55 150
* Unit Rating. Total Rating=Unit Rating 0.7
UNIT
V
V
mA
mA
A
mW
KDS123V
SILICON EPITAXIAL PLANAR DIODE
E
B
2
DIM MILLIMETERS
A
1.2 +_0.05
B
0.8 +_0.05
1
3
C
0.5 +_ 0.05
D
0.3 +_ 0.05
E
1.2 +_ 0.05
G
0.8 +_ 0.05
P
P
H
0.40
J
0.12+_ 0.05
K
0.2 +_ 0.05
P
5
1. CATHODE 2
2. ANODE 1
3. ANODE 2 / CATHODE 1
3
D1
D2
2
1
VSM
Marking
US
Type Name
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Forward Voltage
V_F
Reverse Current
I_R
Total Capacitance
C_T
TEST CONDITION
I_F=100mA
V_R=80V
V_R=6V, f=1MHz
MIN.
-
-
-
TYP.
-
-
-
MAX.
1.2
0.1
3.5
UNIT
V
A
pF
2007. 10. 31
Revision No : 0
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