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2N3906SC Datasheet, PDF (2/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR
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2N3906SC
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
ICEX
VCE=-30V, VEB=-3V
Collector Cut-off Current
ICBO
VCB=-30V, IE=0
Emitter Cut-off Current
Collector-Base Breakdown Voltage
IEBO
V(BR)CBO
VEB=-3V, IC=0
IC=-10ǺA, IE=0
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
* V(BR)CEO
* V(BR)EBO
IC=-1mA, IB=0
IE=-10ǺA, IC=0
DC Current Gain
*
hFE
VCE=-1V, IC=-10mA
Collector-Emitter Saturation Voltage * VCE(sat) IC=-50mA, IB=-5mA
Base-Emitter Saturation Voltage
* VBE(sat) IC=-50mA, IB=-5mA
Transition Frequency
fT
VCE=-20V, IC=-10mA, f=100MHz
Delay Time
td
Rise Time
tr
Switching Time
Storage Time
tstg
Fall Time
tf
* Pulse Test : Pulse Width∔300ǺS, Duty Cycle∔2%.
MIN.
-
-
-
-40
-40
-5.0
150
-
-
250
TYP. MAX. UNIT
-
-50 nA
-
-100 nA
-
-100 nA
-
-
V
-
-
V
-
-
V
-
250
-
-0.4 V
- -0.95 V
-
- MHz
-
-
35
-
-
35
nS
-
-
225
-
-
75
2015. 5. 12
Revision No : 0
2/3
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