2N3906SC Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
2N3906SC
EPITAXIAL PLANAR PNP TRANSISTOR
FEATURES
hLow Leakage Current
: I_CEX=-50nA(Max.), I_BL=-50nA(Max.)
@V_CE=-30V, V_EB=-3V.
hExcellent DC Current Gain Linearity.
hLow Saturation Voltage
: V_CE(sat)=-0.4V(Max.) @I_C=-50mA, I_B=-5mA.
hComplementary to 2N3904SC.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
V_CBO
-40
Collector-Emitter Voltage
V_CEO
-40
Emitter-Base Voltage
V_EBO
-5
Collector Current
I_C
-200
Base Current
I_B
-50
Collector Power Dissipation
P_C *
350
Junction Temperature
T_j
150
Storage Temperature Range
T_stg
-55q150
Note : * Package Mounted On 99.5% Alumina 10ƒ8ƒ0.6ɘ)
UNIT
V
V
V
mA
mA
mW


2015. 5. 12
Revision No : 0
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