2N3906C_02 Datasheet, PDF (2/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR

2N3906C
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Base Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage *
Emitter-Base Breakdown Voltage
DC Current Gain
*
Collector-Emitter Saturation Voltage *
Base-Emitter Saturation Voltage
*
Transition Frequency
Collector Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small-Signal Current Gain
Collector Output Admittance
Noise Figure
I_CEX
I_BL
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
h_FE(1)
h_FE(2)
h_FE(3)
h_FE(4)
h_FE(5)
V_CE(sat)1
V_CE(sat)2
V_BE(sat)1
V_BE(sat)2
f_T
C_ob
C_ib
h_ie
h_re
h_fe
h_oe
NF
V_CE=-30V, V_EB=-3V
V_CE=-30V, V_EB=-3V
I_C=-10 A, I_E=0
I_C=-1mA, I_B=0
I_E=-10 A, I_C=0
V_CE=-1V, I_C=-0.1mA
V_CE=-1V, I_C=-1mA
V_CE=-1V, I_C=-10mA
V_CE=-1V, I_C=-50mA
V_CE=-1V, I_C=-100mA
I_C=-10mA, I_B=-1mA
I_C=-50mA, I_B=-5mA
I_C=-10mA, I_B=-1mA
I_C=-50mA, I_B=-5mA
V_CE=-20V, I_C=-10mA, f=100MHz
V_CB=-5V, I_E=0, f=1MHz
V_BE=-0.5V, I_C=0, f=1MHz
V_CE=-10V, I_C=-1mA, f=1kHz
V_CE=-5V, I_C=-0.1mA,
Rg=1k , f=10Hz 15.7kHz
Delay Time
t_d
10kΩ
V_in
V_out
C _{Total 4pF}
MIN.
-
-
-40
-40
-5.0
60
80
100
60
30
-
-
-0.65
-
250
-
-
2.0
1.0
100
3.0
-
-
TYP.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX.
-50
-50
-
-
-
-
-
300
-
-
-0.25
-0.4
-0.85
-0.95
-
4.5
10
12
10
400
60
UNIT
nA
nA
V
V
V
V
V
MHz
pF
pF
k
x10^-4
-
4.0
dB
-
35
Switching Time
Rise Time
Storage Time
Fall Time
0.5V
t_r
-10.6V
0
V_CC =-3.0V
t_r ,t _f < 1ns, Du=2%
-
300ns
V_out
t_stg
10kΩ
V_in
1N916
or equiv.
-
C _{Total 4pF}
V_CC =-3.0V
t_f
9.1V
-10.9V
0
t _r,t _f < 1ns, Du=2%
-
20µs
* Pulse Test : Pulse Width 300 S, Duty Cycle 2%.
-
35
nS
-
225
-
75
2002. 2. 20
Revision No : 1
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