2N3906C_02 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Low Leakage Current
: I_CEX=-50nA(Max.), I_BL=-50nA(Max.)
@V_CE=-30V, V_EB=-3V.
Excellent DC Current Gain Linearity.
Low Saturation Voltage
: V_CE(sat)=-0.4V(Max.) @I_C=-50mA, I_B=-5mA.
Low Collector Output Capacitance
: C_ob=4.5pF(Max.) @V_CB=5V.
Complementary to 2N3904C.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power
Dissipation
Ta=25
Tc=25
Junction Temperature
Storage Temperature Range
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
RATING
-40
-40
-5
-200
-50
625
1.5
150
-55 150
UNIT
V
V
V
mA
mA
mW
W
2N3906C
EPITAXIAL PLANAR PNP TRANSISTOR
B
C
K
E
G
D
H
F
F
1 23
N DIM MILLIMETERS
A
4.70 MAX
B
4.80 MAX
C
3.70 MAX
D
0.45
E
1.00
F
1.27
G
0.85
H
0.45
J
14.00 +_0.50
K
0.55 MAX
L
2.30
M
0.45 MAX
N
1.00
1. EMITTER
2. COLLECTOR
3. BASE
TO-92
2002. 2. 20
Revision No : 1
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