JCS640 Datasheet, PDF (5/10 Pages) JILIN SINO-MICROELECTRONICS CO., LTD. – N-CHANNEL MOSFET

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特征曲线 ELECTRICAL CHARACTERISTICS (curves)
JCS640
On-Region Characteristics
Transfer Characteristics
V_GS
Top 15V
10V
9V
8V
7V
6.5V
6V
10
5.5V
Bottom 5V
10
150℃
1
25℃
Notes:
1. 250μs pulse test
0.1
2. T_C=25℃
Notes:
1.250μs pulse test
2.V_DS=40V
1
1
10
2
4
6
8
10
V_DS [V]
V_GS Gate-Source Voltage[V]
On-Resistance Variation vs.
Drain Current and Gate Voltage
Body Diode Forward Voltage Variation
vs. Source Current and Temperature
0.22
0.21
0.20
0.19
0.18
0.17
0.16
0.15
0.14
0
V_GS=20V
V_GS=10V
Note:T_j=25℃
2 4 6 8 10 12 14 16 18 20 22
I_D [A]
10
150℃
1
25℃
0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
V _{S D} Source-Drain voltage[V]
Capacitance Characteristics
Gate Charge Characteristics
12
V_DS=40V
10
V_DS=100V
8
V_DS=160V
6
4
2
0
0
10
20
30
40
50
Q_g Toltal Gate Charge [nC]
版本：201007A
5/10