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JCS640 Datasheet, PDF (3/10 Pages) JILIN SINO-MICROELECTRONICS CO., LTD. – N-CHANNEL MOSFET | |||
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R
çµç¹æ§ ELECTRICAL CHARACTERISTICS
JCS640
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Parameter
Symbol
Tests conditions
Min Typ Max Units
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³æç¹æ§ Off âCharacteristics
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Drain-Source Voltage
BVDSS ID=250μA, VGS=0V
200 - - V
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Breakdown Voltage Temperature
Coefficient
ÎBVDSS/Î ID=250μA, referenced to
TJ
25â
- 0.2 - V/â
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Zero Gate Voltage Drain Current IDSS
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VDS=200V,VGS=0V, TC=25
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-
VDS=160V, TC=125â
-
- 10 μA
- 100 μA
Gate-body leakage current,
forward
IGSSF
VDS=0V, VGS =30V
- - 100 nA
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Gate-body leakage current,
reverse
IGSSR
VDS=0V, VGS =-30V
- - -100 nA
éæç¹æ§ On-Characteristics
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Gate Threshold Voltage
VGS(th) VDS = VGS , ID=250μA
2.0 - 4.0 V
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Static Drain-Source
On-Resistance
RDS(ON) VGS =10V , ID=9A
- 0.15 0.18 â¦
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Forward Transconductance
gfs
VDS = 40V, ID=9Aï¼note 4ï¼ - 13.5 - S
å¨æç¹æ§ Dynamic Characteristics
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Input capacitance
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Output capacitance
Ciss
Coss
VDS=25V,
VGS =0V,
f=1.0MHZ
- 1330 1760 pF
- 181 245 pF
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Reverse transfer capacitance
Crss
- 48 65 pF
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3/10
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