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| JCS20N60WH Datasheet, PDF (5/8 Pages) JILIN SINO-MICROELECTRONICS CO., LTD. – High efficiency switch mode power supplies | |||
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JCS20N60WH
ç¹å¾æ²çº¿ ELECTRICAL CHARACTERISTICS (curves)
On-Region Characteristics
Transfer Characteristics
102
Vgs
Top 15.0V
10.0V
9.0V
8.0V
7.0V
6.5V
6.0V
Bottom 5.5V
101
102
150â
101
*Note:
1. 250μs Pulse Test
100
100
2. TJ=25â
101
VDS Drain-Source Voltage[V]
On-Resistance Variation vs
Drain Current and Gate Voltage
0.7
0.6
0.5
VGS=10V
0.4
0.3
0.2
VGS=20V
0.1
0.0
0
2
9000
8000
7000
6000
5000
4000
3000
2000
1000
0
10-1
Note ï¼T j=25â
4
6
8 10 12 14 16 18 20 22
ID [A]
Capacitance Characteristics
Ciss=Cgs+Cgd(Cds=shorted)
Coss=Cds+Cgd
Crss=Cgd
Coss
Ciss
*Note:
1. VGS=0V
2. f=1 MHz
Crss
100
101
V DS Drain-Source Voltage [V]
-55â
Note:
1.VDS=40V
25â 2.250μs Pulse Test
100
2
4
6
8
10
12
VGS Gate-Source Voltage[V]
Body Diode Forward Voltage Variation
vs. Source Current and Temperature
101
100
0.2
150â
25â
Note:
1.VGS=0V
2.250μs Pulse Test
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
VSD Source-Drain voltage[V]
Capacitance Characteristics
12
VDS=400V
10
VDS=250V
VDS=100V
8
6
4
2
*Note:ID=20A
0
0
5
10 15 20 25 30 35 40 45 50
Qg Toltal Gate Charge [nC]
çæ¬ï¼201409B
5/8
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