JCS12N60T Datasheet, PDF (5/10 Pages) JILIN SINO-MICROELECTRONICS CO., LTD. – N-CHANNEL MOSFET

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特征曲线 ELECTRICAL CHARACTERISTICS (curves)
JCS12N60T
On-Region Characteristics
V_GS
Top 15V
10V
8V
7V
6.5V
6V
10
5.5V
Bottom 5V
Transfer Characteristics
10
150 ℃
1
25℃
Notes:
1. 250μs pulse test
1
2. T_C=25℃
1
10
V_DS [V]
On-Resistance Variation vs.
Drain Current and Gate Voltage
Notes:
1.250μs pulse test
2.V_DS=40V
0.1
2
4
6
8
10
V_GS [V]
Body Diode Forward Voltage Variation
vs. Source Current and Temperature
0.85
0.80
V_GS=10V
0.75
0.70
0.65
0.60
V_GS=20V
0.55
Note:T_j=25 ℃
0.50
0
2
4
6
8 10 12 14 16 18 20
I_D [A]
Capacitance Characteristics
3x10³
C_iss=C_gs+C_gd(C_ds=shorted)
C_oss=C_ds+C_gd
C_rss=C_gd
2x10³
1x10³
0
10^-1
10⁰
10¹
V _DS Drain-Source Voltage [V]
10
25 ℃
1
150 ℃
Notes:
1. 250μs pulse test
2. V_GS=0V
0.1
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
V _{S D} [V]
Gate Charge Characteristics
12
V_DS=480V
10
V_DS=300V
8
V_DS=120V
6
4
2
0
0
10
20
30
40
Q_g Toltal Gate Charge [nC]
版本：201010C
5/10