JCS10N60BT Datasheet, PDF (5/9 Pages) JILIN SINO-MICROELECTRONICS CO., LTD. – N-CHANNEL MOSFET

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特征曲线 ELECTRICAL CHARACTERISTICS (curves)
JCS10N60BT
On-Region Characteristics
V_GS
Top 15V
10V
9V
8V
7V
10
6.5V
6V
5.5V
Bottom 5V
Notes：
1
1. 250μs pulse test
2. T_C=25℃
1
10
V_DS [V]
On-Resistance Variation vs.
Drain Current and Gate Voltage
1.00
0.95
0.90
V_GS=10V
0.85
0.80
V_GS=20V
0.75
0.70
0.65
Note ：T_j=25℃
0.60
0
2
4
6
8
10
12
14
16
18
I_D [A]
Capacitance Characteristics
Transfer Characteristics
10
25℃
150℃
1
Notes：
1.250μs pulse test
2.V_DS=40V
0.1
2
4
6
8
10
V_GS [V]
Body Diode Forward Voltage Variation
vs. Source Current and Temperature
10
25℃
1
150℃
Notes：
1. 250μs pulse test
2. V_GS=0V
0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
V_SD [V]
Gate Charge Characteristics
12
V_DS=480V
10
V_DS=300V
8
V_DS=120V
6
4
2
0
0
10
20
30
40
Q_g Toltal Gate Charge [nC]
版本：201012A
5/9