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JCS10N60BT Datasheet, PDF (2/9 Pages) JILIN SINO-MICROELECTRONICS CO., LTD. – N-CHANNEL MOSFET | |||
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R
ç»å¯¹æ大é¢å®å¼ ABSOLUTE RATINGS (Tc=25â)
项ç®
Parameter
符å·
Symbol
æé«æ¼æï¼æºæç´æµçµå
Drain-Source Voltage
VDSS
è¿ç»æ¼æçµæµ
Drain Current -continuous
ID
T=25â
T=100â
æ大èå²æ¼æçµæµï¼æ³¨ 1ï¼
Drain Current - pulse ï¼note 1ï¼
æé«æ
æºçµå
Gate-Source Voltage
IDM
VGSS
åèå²éªå´©è½éï¼æ³¨ 2ï¼
Single Pulsed Avalanche Energyï¼note 2ï¼ EAS
éªå´©çµæµï¼æ³¨ 1ï¼
Avalanche Currentï¼note 1ï¼
IAR
éå¤éªå´©è½éï¼æ³¨ 1ï¼
Repetitive Avalanche Currentï¼note 1ï¼ EAR
äºæ管ååæ¢å¤æ大çµåååéçï¼æ³¨ 3ï¼
Peak Diode Recovery dv/dtï¼note 3ï¼
dv/dt
èæ£åç
Power Dissipation
PD
TC=25â
-Derate
above
25â
æé«ç»æ¸©ååå¨æ¸©åº¦
Operating and Storage Temperature
Range
å¼çº¿æé«çæ¥æ¸©åº¦
TJï¼TSTG
Maximum Lead Temperature for
TL
Soldering Purposes
*æ¼æçµæµç±æé«ç»æ¸©éå¶
*Drain current limited by maximum junction temperature
JCS10N60BT
æ°å¼
Value
JCS10N60BT
600
9.5*
6.0*
40*
±30
713
9.5
17.8
4.5
178
åä½
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
1.43
W/â
-55ï½+150
â
300
â
çæ¬ï¼201012A
2/9
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