|
JCS8N60C Datasheet, PDF (4/14 Pages) JILIN SINO-MICROELECTRONICS CO., LTD. – High frequency switching mode power supply | |||
|
◁ |
R
JCS8N60C
çµç¹æ§ ELECTRICAL CHARACTERISTICS
å¼å
³ç¹æ§ Switching Characteristics
延è¿æ¶é´ Turn-On delay time
ä¸åæ¶é´ Turn-On rise time
td(on)
tr
VDD=300V,ID=7A,RG=25â¦
ï¼note 4ï¼5ï¼
- 11 31 ns
- 35 80 ns
延è¿æ¶é´ Turn-Off delay time
td(off)
- 46 95 ns
ä¸éæ¶é´ Turn-Off Fall time
tf
- 40 92 ns
æ
æçµè·æ»é Total Gate Charge Qg
VDS =480V ,
- 32 41 nC
æ
ï¼æºçµè· Gate-Source charge
Qgs
æ
ï¼æ¼çµè· Gate-Drain charge
Qgd
ID=7A
VGS =10V ï¼note 4ï¼5ï¼
- 6 - nC
- 15 - nC
æ¼ï¼æºäºæ管ç¹æ§åæ大é¢å®å¼ Drain-Source Diode Characteristics and Maximum Ratings
æ£åæ大è¿ç»çµæµ
Maximum Continuous Drain
-Source Diode Forward Current
IS
- - 7.0 A
æ£åæ大èå²çµæµ
Maximum Pulsed Drain-Source
Diode Forward Current
ISM
- - 28 A
æ£ååé
Drain-Source Diode Forward
VSD
Voltage
VGS=0V, IS=7.0A
- - 1.4 V
ååæ¢å¤æ¶é´
Reverse recovery time
trr
ååæ¢å¤çµè·
Reverse recovery charge
Qrr
çç¹æ§ THERMAL CHARACTERISTIC
VGS=0V, IS=7.0A
dIF/dt=100A/μs (note 4)
- 345 - ns
- 3.2 - μC
项ç®
符å·
æ大 Max
åä½
Parameter
Symbol JCS8N60VC/RC/CC/SC/BC JCS8N60FC Unit
ç»å°ç®¡å£³ççé»
Thermal Resistance, Junction Rth(j-c)
1.04
3.2
â/W
to Case
ç»å°ç¯å¢ççé»
Thermal Resistance,
Rth(j-A)
62.5
62.5
â/W
Junction to Ambient
注éï¼
Notes:
1ï¼èå²å®½åº¦ç±æé«ç»æ¸©éå¶
1ï¼Pulse width limited by maximum junction temperature
2ï¼L=14mH, IAS=7.0A, VDD=50V, RG=25 â¦,èµ·å§ç»
温 TJ=25â
3 ï¼ ISDâ¤6.0A,di/dtâ¤300A/μs,VDDâ¤BVDSS, èµ· å§ ç» æ¸©
TJ=25â
4ï¼èå²æµè¯ï¼èå²å®½åº¦â¤300μs,å 空æ¯â¤2ï¼
2 ï¼ L=14mH, IAS=7.0A, VDD=50V, RG=25 â¦,Starting
TJ=25â
3ï¼ISDâ¤6.0A,di/dtâ¤300A/μs,VDDâ¤BVDSS, Starting TJ=25â
4ï¼Pulse Testï¼Pulse Width â¤300μs,Duty Cycleâ¤2ï¼
5ï¼Essentially independent of operating temperature
5ï¼åºæ¬ä¸å·¥ä½æ¸©åº¦æ å
³
çæ¬ï¼201503A
4/14
|
▷ |