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JCS8N60C Datasheet, PDF (3/14 Pages) JILIN SINO-MICROELECTRONICS CO., LTD. – High frequency switching mode power supply | |||
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R
çµç¹æ§ ELECTRICAL CHARACTERISTICS
JCS8N60C
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Parameter
Symbol
Tests conditions
Min Typ Max Units
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³æç¹æ§ Off âCharacteristics
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Drain-Source Voltage
BVDSS
ID=250μA, VGS=0V
600 - - V
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Breakdown Voltage Temperature
Coefficient
ÎBVDSS/Î ID=250μA, referenced to
TJ
25â
-
0.65 - V/â
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Zero Gate Voltage Drain Current
IDSS
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VDS=600V,VGS=0V,
TC=25â
VDS=480V, TC=125â
- - 10 μA
- - 100 μA
Gate-body leakage current,
forward
IGSSF
VDS=0V, VGS =30V
- - 100 nA
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Gate-body leakage current,
reverse
IGSSR
VDS=0V, VGS =-30V
- - -100 nA
éæç¹æ§ On-Characteristics
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Gate Threshold Voltage
VGS(th)
VDS = VGS , ID=250μA
2.0 - 4.0 V
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Static Drain-Source
On-Resistance
RDS(ON) VGS =10V , ID=3.5A
- 1.26 1.6 â¦
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Forward Transconductance
gfs
VDS = 40V, ID=3.5Aï¼note 4ï¼ - 5.6 - S
å¨æç¹æ§ Dynamic Characteristics
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Input capacitance
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Output capacitance
Ciss
VDS=25V,
VGS =0V,
f=1.0MHZ
Coss
- 1620 1890 pF
- 125 170 pF
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Reverse transfer capacitance
Crss
- 14 20 pF
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3/14
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