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JCS3N65VC Datasheet, PDF (4/8 Pages) JILIN SINO-MICROELECTRONICS CO., LTD. – High efficiency switch mode power supplies | |||
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JCS3N65VC
çµç¹æ§ ELECTRICAL CHARACTERISTICS
å¼å
³ç¹æ§ Switching Characteristics
延è¿æ¶é´ Turn-On delay time
ä¸åæ¶é´ Turn-On rise time
延è¿æ¶é´ Turn-Off delay time
td(on)
tr
td(off)
VDD=300V,ID=2.0A,RG=25⦠- 9 30 ns
ï¼note 4ï¼5ï¼
- 30 65 ns
- 25 50 ns
ä¸éæ¶é´ Turn-Off Fall time
tf
- 32 65 ns
æ
æçµè·æ»é Total Gate Charge Qg
æ
ï¼æºçµè· Gate-Source charge Qgs
æ
ï¼æ¼çµè· Gate-Drain charge
Qgd
VDS =480V ,
ID=2.0A
VGS=10V ï¼note 4ï¼5ï¼
- 9 13 nC
- 2.7 - nC
- 4.9 - nC
æ¼ï¼æºäºæ管ç¹æ§åæ大é¢å®å¼ Drain-Source Diode Characteristics and Maximum Ratings
æ£åæ大è¿ç»çµæµ
Maximum Continuous Drain
-Source Diode Forward Current
IS
- - 3.0 A
æ£åæ大èå²çµæµ
Maximum Pulsed Drain-Source
Diode Forward Current
ISM
- - 12.0 A
æ£ååé
Drain-Source Diode Forward
Voltage
VSD
VGS=0V, IS=3.0A
- - 1.4 V
ååæ¢å¤æ¶é´
Reverse recovery time
trr
ååæ¢å¤çµè·
Reverse recovery charge
Qrr
çç¹æ§ THERMAL CHARACTERISTIC
VGS=0V, IS=3.0A
dIF/dt=100A/μs (note 4)
- 220 - ns
- 1.1 - μC
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Parameter
符å·
Symbol
æ大
Max
JCS3N65VC
åä½
Unit
ç»å°ç®¡å£³ççé»
Thermal Resistance, Junction to Case Rth(j-c)
2.87
â/W
ç»å°ç¯å¢ççé»
Thermal Resistance, Junction to
Ambient
Rth(j-A)
110
â/W
注éï¼
1ï¼èå²å®½åº¦ç±æé«ç»æ¸©éå¶
2ï¼L=46mH, IAS=2.4A, VDD=50V, RG=25 â¦,èµ·å§ç»
温TJ=25â
3ï¼ISD â¤2A,di/dt â¤300A/μs,VDDâ¤BVDSS,èµ·å§ç»æ¸©
TJ=25â
4ï¼èå²æµè¯ï¼èå²å®½åº¦â¤300μs,å 空æ¯â¤2ï¼
5ï¼åºæ¬ä¸å·¥ä½æ¸©åº¦æ å
³
Notes:
1ï¼Pulse width limited by maximum junction temperature
2ï¼L=46mH, IAS=2.4A, VDD=50V, RG=25 â¦,Starting
TJ=25â
3ï¼ISD â¤2A,di/dt â¤300A/μs,VDDâ¤BVDSS, Starting TJ=25â
4ï¼Pulse Testï¼Pulse Width â¤300μs,Duty Cycleâ¤2ï¼
5ï¼Essentially independent of operating temperature
çæ¬ï¼201407A
4/18
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