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JCS3N65VC Datasheet, PDF (4/8 Pages) JILIN SINO-MICROELECTRONICS CO., LTD. – High efficiency switch mode power supplies
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JCS3N65VC
电特性 ELECTRICAL CHARACTERISTICS
开关特性 Switching Characteristics
延迟时间 Turn-On delay time
上升时间 Turn-On rise time
延迟时间 Turn-Off delay time
td(on)
tr
td(off)
VDD=300V,ID=2.0A,RG=25Ω - 9 30 ns
(note 4,5)
- 30 65 ns
- 25 50 ns
下降时间 Turn-Off Fall time
tf
- 32 65 ns
栅极电荷总量 Total Gate Charge Qg
栅-源电荷 Gate-Source charge Qgs
栅-漏电荷 Gate-Drain charge
Qgd
VDS =480V ,
ID=2.0A
VGS=10V (note 4,5)
- 9 13 nC
- 2.7 - nC
- 4.9 - nC
漏-源二极管特性及最大额定值 Drain-Source Diode Characteristics and Maximum Ratings
正向最大连续电流
Maximum Continuous Drain
-Source Diode Forward Current
IS
- - 3.0 A
正向最大脉冲电流
Maximum Pulsed Drain-Source
Diode Forward Current
ISM
- - 12.0 A
正向压降
Drain-Source Diode Forward
Voltage
VSD
VGS=0V, IS=3.0A
- - 1.4 V
反向恢复时间
Reverse recovery time
trr
反向恢复电荷
Reverse recovery charge
Qrr
热特性 THERMAL CHARACTERISTIC
VGS=0V, IS=3.0A
dIF/dt=100A/μs (note 4)
- 220 - ns
- 1.1 - μC
项目
Parameter
符号
Symbol
最大
Max
JCS3N65VC
单位
Unit
结到管壳的热阻
Thermal Resistance, Junction to Case Rth(j-c)
2.87
℃/W
结到环境的热阻
Thermal Resistance, Junction to
Ambient
Rth(j-A)
110
℃/W
注释:
1:脉冲宽度由最高结温限制
2:L=46mH, IAS=2.4A, VDD=50V, RG=25 Ω,起始结
温TJ=25℃
3:ISD ≤2A,di/dt ≤300A/μs,VDD≤BVDSS,起始结温
TJ=25℃
4:脉冲测试:脉冲宽度≤300μs,占空比≤2%
5:基本与工作温度无关
Notes:
1:Pulse width limited by maximum junction temperature
2:L=46mH, IAS=2.4A, VDD=50V, RG=25 Ω,Starting
TJ=25℃
3:ISD ≤2A,di/dt ≤300A/μs,VDD≤BVDSS, Starting TJ=25℃
4:Pulse Test:Pulse Width ≤300μs,Duty Cycle≤2%
5:Essentially independent of operating temperature
版本:201407A
4/18