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JCS3N65VC Datasheet, PDF (3/8 Pages) JILIN SINO-MICROELECTRONICS CO., LTD. – High efficiency switch mode power supplies | |||
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R
çµç¹æ§ ELECTRICAL CHARACTERISTICS
JCS3N65VC
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Parameter
Symbol
Tests conditions
Min Typ Max Units
å
³æç¹æ§ Off âCharacteristics
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Drain-Source Voltage
BVDSS
IBDB=250μA, VBGSB=0V
650 - - V
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Breakdown Voltage Temperature
Coefficient
ÎBVDSS/ÎTJ
IBDB=1mA,
25â
referenced
to
- 0.6 - V/â
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Zero Gate Voltage Drain Current IDSS
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VBDSB=650V,VBGSB=0V,
TBCB=25â
VBDSB=520V, TBCB=125â
- - 10 μA
- - 100 μA
Gate-body leakage current,
forward
IGSSF
VBDSB=0V,
V GS B
B
=30V
- - 100 nA
ååæ
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Gate-body leakage current,
reverse
IGSSR
VDS=0V, VGS =-30V
- - -100 nA
éæç¹æ§ On-Characteristics
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Gate Threshold Voltage
VGS(th)
VDS
=
V GS B
B
,
ID=250μA
2.0 - 4.0 V
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Static Drain-Source
On-Resistance
RDS(ON)
VGS =10V , ID=1.5A
- 3.9 4.5 â¦
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Forward Transconductance
gfs
VDS = 40V , ID=1.5Aï¼note 4ï¼ - 2.45 - S
å¨æç¹æ§ Dynamic Characteristics
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Input capacitance
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Output capacitance
Ciss
Coss
VDS=25V,
VGS =0V,
f=1.0MHBZB
- 350 460 pF
- 51 65 pF
ååä¼ è¾çµå®¹
Reverse transfer capacitance
Crss
- 5.3 7.5 pF
çæ¬ï¼201407A
3/18
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