JCS15N65H Datasheet, PDF (3/9 Pages) JILIN SINO-MICROELECTRONICS CO., LTD. – High efficiency switch mode power supplies

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JCS15N65H
电特性 ELECTRICAL CHARACTERISTICS
项目
符号
测试条件
最小 典型 最 大单 位
Parameter
Symbol
Tests conditions
Min Typ Max Units
关态特性 Off –Characteristics
漏－源击穿电压
Drain-Source Voltage
BV_DSS
I _DB
=250μA,
B
VB_GSB=0V
650 - - V
击穿电压温度特性
Breakdown Voltage Temperature
Coefficient
ΔBV_DSS/ΔT_J
I _DB
=1m
B
A,
25℃
referenced
to
- 0.79 - V/℃
零栅压下漏极漏电流
Zero Gate Voltage Drain Current ^IDSS
正向栅极体漏电流
VB_DSB=650V,VB_GSB=0V,
TB_CB=25℃
VB_DSB=520V, TB_CB=125℃
- - 10 μA
- - 100 μA
Gate-body leakage current,
forward
I_GSSF
VB_DSB=0V,
V _GS B
B
=30V
- - 100 nA
反向栅极体漏电流
Gate-body leakage current,
reverse
I_GSSR
V_DS=0V, V_GS =-30V
- - -100 nA
通态特性 On-Characteristics
阈值电压
Gate Threshold Voltage
V_GS(th)
V_DS
=
V _GS B
B
,
I_D=250μA
3.0 - 5.0 V
静态导通电阻
Static Drain-Source
On-Resistance
R_DS(ON)
V_GS =10V , I_D=7.5A
- 0.5 0.6 Ω
正向跨导
Forward Transconductance
g_fs
V_DS = 40V , I_D=7.5A（note 4） - 11.0 - S
动态特性 Dynamic Characteristics
输入电容
Input capacitance
输出电容
Output capacitance
C_iss
C_oss
V_DS=25V,
V_GS =0V,
f=1.0MHB_ZB
- 2080 2600 pF
- 200 350 pF
反向传输电容
Reverse transfer capacitance
C_rss
- 10 40 pF
版本：201505A
3/9